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The scattering (total, forward and backward) of light at red, green and blue wavelengths was calculated for the pollen cone of the umbellifer. The polarizabilities of a dry and a wet pollen cone, calculated in a three-layer model, were found to be similar in agreement with the experiments. However, there is a deviation of the polarizability between the observed and calculated forward scattering. An increase of the measured forward scattering for a green ray was found at the opening part of the pollen cone.1. Field of the Invention
The present invention relates to a thread model which simulates sewing of a thread.
2. Description of the Related Art
Conventionally, in a sewing device which simulates sewing of an operator, the movement of a needle is inputted based on a speed signal, and a predetermined amount of thread is automatically sewn.
An example of the conventional sewing device will be described below.
A sewing device 10 shown in FIG. 6 has a stitching-receiving bed plate 11 mounted on a base 12. A sewing machine 13 is detachably mounted on the base 12. When the sewing machine 13 is mounted on the base 12, a needle of the sewing machine 13 moves in a specified direction (y direction in FIG. 6) to sew thread, and the sewing machine 13 sews a needle-stitch on a bobbin case 14.
The sewing machine 13 has a needle-driving motor (not shown), a threaded needle (not shown), a thread takeup motor (not shown), and a needle-position adjusting mechanism (not shown). A code plate 16 is mounted on the bed plate 11. The code plate 16 has a plurality of light-transmitting portions 16a arranged in a spiral shape. The code plate 16 reflects a light emitted from
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With an increase of integration density of a semiconductor device, the length of a channel region is shortened. In accordance with this, hot carriers are produced by a large amount during a high-speed operation of the semiconductor device, and the short channel effect becomes noticeable as the device is miniaturized.
In order to solve this problem, the so-called “L” shaped or “U” shaped fin is adopted as a means for increasing an effective channel width.
However, if a fin is formed, an upper portion of the fin and a region formed below the fin are not covered with a gate electrode, and the gate electrode does not fully overlap the fin. In the semiconductor device having such a structure, there is a problem in that a gate electric field concentrates on the fin, and it is difficult to control the gate electric field. This is the so-called “resurf” problem.
For example, in a semiconductor device having a gate length of 0.07 μm or less, the transistor performance